PART |
Description |
Maker |
WCSN0436V1P-166AC WCSN0436V1P WCSN0436V1P-100AC WC |
128Kx36 Pipelined SRAM with NoBL TM Architecture
|
WEIDA[Weida Semiconductor, Inc.]
|
K7P401822M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
|
7C1351-66 7C1351-40 7C1351-50 CY7C1351-66AC |
128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K × 36至流通过与总线延迟TM架构的SRAM 128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K X 36 ZBT SRAM, 11 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IDT71P74104S167BQ IDT71P74104S200BQ IDT71P74104S25 |
1.8V 512K x 36 QDR II PipeLined SRAM 1.8V 2M x 9 QDR II PipeLined SRAM 1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 2M x 8 QDR II Pipelined SRAM 18Mb Pipelined QDR II SRAM Burst of 4
|
IDT http://
|
K7N403601B |
(K7N401801B / K7N403601B) 128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
K7N403601A |
(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
|
Samsung semiconductor
|
GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165 36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
CY7C1351 7C1351 CY7C1351-66AC 7C1351-40 7C1351-50 |
128Kx36 Flow-Through SRAM with NoBL TM Architecture From old datasheet system 128Kx36 Flow-Through SRAM with NoBL Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100 4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
CY7C1480V33-167AXI CY7C1486V33-250BGXI CY7C1482V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM 1M X 72 CACHE SRAM, 3 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM 4M X 18 CACHE SRAM, 3 ns, PQFP100 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM 2M X 36 CACHE SRAM, 3 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|